Fig. 4 shows the plot of (h)2 vs. h of CZTS nanoparticles prepared at 240 oC. The band gap of
the nanoproduct was estimated by extrapolating the linear part of the plot to the horizontal axis. The
result shows that the band gap of CZTS is 1.52 eV, which is consistent with bandgap reported for
CZTS prepared by solution methods. This value is also closed to the optimum required bandgap for
solar absorber [14- 16].
4. Conclusion
In this study, we have investigated the effect of temperature on CZTS nanoparticles prepared by
hydrothermal method. It was found that temperature of 240 oC is required for the formation of single
phase CZTS nanoparticles of uniform size and shape. The optical bandgap of 1.52 eV was estimated
from diffusion reflective measurement. Together with the low cost of precursors, the processing
route reported in this paper is very potential for fabricating CZTS ink towards commercial solar
cell product.
6 trang |
Chia sẻ: honghp95 | Lượt xem: 500 | Lượt tải: 0
Bạn đang xem nội dung tài liệu Effect of Temperature on Cu2ZnSnS4 Nanomaterial Synthesized by Hydrothermal Approach - Pham Thi Hong, để tải tài liệu về máy bạn click vào nút DOWNLOAD ở trên
VNU Journal of Science: Mathematics – Physics, Vol. 34, No. 3 (2018) 55-60
55
Effect of Temperature on Cu2ZnSnS4 Nanomaterial
Synthesized by Hydrothermal Approach
Pham Thi Hong1, Nguyen Viet Tuyen1,*, Tran Thi Ha2, Ho Khac Hieu3
1
Faculty of Physics, VNU University of science, 334 Nguyen Trai, Thanh Xuan, Hanoi, Vietnam
2
Faculty of Basis
Sciences, Hanoi University of Mining and Geology, Duc Thang, Tu Liem, Hanoi, Vietnam
3
Institute of Research and Development, Duy Tan University, 03 Quang Trung, Hai Chau, Da Nang, Vietnam
Received 26 July 2018
Revised 10 September 2018; Accepted 11 September 2018
Abstract: Cu2ZnSnS4 (CZTS) is a p-type semiconductor with high absorption coefficient and
direct bandgap from 1 to 1.5 eV, which is ideal for making absorber layer for solar cell. However,
it is difficult to get single phase of CZTS due to the competitive formation of binary and ternary
secondary phases. In this paper, we prepared CZTS nanoparticles by hydrothermal method and
investigate the influence of hydrothermal temperature on the product. Raman scattering, X-ray
diffraction, scanning electron microcopy, energy dispersive X-ray spectroscopy and diffusion
reflective measurement were applied to characterize the products. The products are high
quality nanocrystals of kesterite phase with uniform size which is applicable for solar
absorber layer fabrication.
Keywords: Cu2ZnSnS4, hydrothermal, kesterite, Raman.
1. Introduction
CZTS material is a p-type semiconductor and with direct band gap of around 1.5 eV which is an
ideal value for absorber layer [1, 2]. Besides, CZTS material composes of four elements: copper, zinc,
tin and sulfur, which are all non-toxic elements and available abundantly in the earth’s crust, so CZTS
can help to reduce cost of solar cells in the market. Solar cells based on CZTS light absorber layer is a
promising candidate with the hope of replacing CdTe, CIS, CIGS in the near future [3].
There are various methods for manufacturing CZTS material, which can be categorized into
physical (vacuum) methods and chemical (non-vacuum) methods... In fact, most available methods for
synthesis of CZTS require two or more steps, where sulfurization process of the as-prepared materials
_______
Corresponding author. Tel.: 84-977128393.
Email: nguyenviettuyen@hus.edu.vn
https//doi.org/ 10.25073/2588-1124/vnumap.4280
P.T. Hong et al. / VNU Journal of Science: Mathematics – Physics, Vol. 34, No. 3 (2018) 55-60
56
in sulfur rich media such as S or H2S is applied to enhance quality of the CZTS layer [4-6]. The
drawback of annealing process is long time and especially harm to environment. So single-step
method is preferred for fabrication of CZTS. In phase diagram of ternary system Cu2S, ZnS, and SnS2,
CZTS exists only in very small area, implying that binary and ternary secondary phases such as Cu2S,
ZnS, Cu2SnS3, Cu3SnS4 are much easier to form than CZTS [7, 8]. Hence, study to control the
formation of secondary phases and residues is very important. In this report, we fabricate CZTS
nanoparticles by hydrothermal method, which is cost effective, environment friendly, and easily to
upscale for mass production.
2. Experiment
CZTS nanopowder was fabricated by hydrothermal method because this method is simple and no
further annealing process is required. Starting materials were 0.2M Copper (II) nitrate Cu(NO3)2, 0.1
M Zinc nitrate Zn(NO3)2, 0.1M Tin (II) chloride SnCl4, 0.4 M Thiourea
C2H5(NO2). Equal volumes of metal salts were mixed well by magnetic stirrer followed by adding
dropwise of thiourea of equal molar. The solution was continuously stirred for two more hours and
then transferred to a Teflon container for hydrothermal reaction. The obtained products were cleaned
with distilled water and ethanol by centrifugation at 5000 rpm for at least 5 cycles. The products were
then dried at 65 during 3h to obtain final products in form of black powder. Three samples were
prepared by hydrothermal at different temperatures 120, 180 and 240
o
C while hydrothermal time was
kept constant in 24h.
The crystal structure characterization was studied using X-ray diffractometer (XRD) SIEMES
D5005, Bruker, Germany. Raman spectrum measurement was collected using LabRam HR800 Raman
spectroscopy from Horiba Jobin Yvon. Scanning electron microscopy (SEM) and energy dispersive X-
ray spectroscopy (EDS) were performed on Nova nano SEM 450 FEI to study the surface morphology
and elemental composition of the product. Diffuse reflectance spectra of the samples were measured
with Cary 5000 spectrometer from Varian – USA.
3. Results and discussion
XRD patterns of the samples are shown in Fig. 1. Prominent diffraction peaks, which could be
observed at 28.4 , 33.9 , 47.4 and 56.3 , match well with the JCPS card No. 26-0575 of kesterite
CZTS. Besides the peaks due to reflection from (112), (200), (220) and (312) planes of CZTS
kesterite, weaker peaks corresponding to CuS appear in the patterns of samples prepared at 120 and
180
o
C. It is well known that copper sulfide is a detrimental secondary phase of CZTS, which increases
the shunt current, and lower substantially the efficiency of CZTS solar cells. One key problem in
dealing with CZTS solar cell is to suppress the formation of secondary phases, especially secondary
phases of high conductivity like copper tin sulfur or copper sulfur [9].
The XRD patterns likely show that hydrothermal reaction at 240
o
C helps to convert the precursors
to CZTS of single phase, which is hopefully applicable for solar cell fabrication.
Higher hydrothermal temperature also better the crystal quality of the CZTS nanoparticles as
demonstrated by the smaller full width at half maximum of the diffraction peak. However, it also
should be noted that, many secondary phases of CZTS share the same diffraction peaks with the main
phase due to similar scattering cross section area. In order to confirm the purity of the nanoproduct
prepared at 240
o
C, it is necessary to cross check phase purity by Raman measurement.
P.T. Hong et al. / VNU Journal of Science: Mathematics – Physics, Vol. 34, No. 3 (2018) 55-60 57
30 40 50 60
(312)
(220)
(200)
240
o
C
180
o
C
In
te
n
si
ty
(
a.
u
.)
2(deg.)
CZTS
CuS
120
o
C
(112)
Fig. 1. XRD pattern of CZTS synthesized at 120 , 180 and 240 in 24h.
100 200 300 400 500 600 700
240
o
C
180
o
C
I
n
te
n
s
it
y
(
a
.u
.)
Raman shift (cm
-1
)
333
472
325
466
120
o
C
Fig. 2. Raman spectra of samples prepared at 120, 180 and 240
o
C in 24 h.
Fig. 2 shows Raman spectra of the samples prepared at different temperatures. Unlike XRD
pattern, Raman spectra of CZTS is resolved clearly from those of binary and ternary secondary phase
such as: Cu1-xS, Cu2SnS3[10]
Raman spectra of samples prepared at 120C in 6h, shown in Fig. 2, are composed of a strong
peak located at around 466 cm
-1
which can be assigned to Cu2-xS. A weaker and broader peak at 325
cm
-1
could be convolutions of different phases such as: Cu2SnS3, Cu3SnS4, CZTS At higher
hydrothermal temperature, a strong A1 peak at 330 cm
-1
of CZTS could be observed clearly in addition
to a small peak of Cu2-xS. The results demonstrate that at 180
o
C, most of the precursors were
converted into CZTS of kesterite structure. However the sample still contains of Cu2-xS and not
excluded some other secondary phases at low concentration because the A1 peak characterized by
CZTS is still quite broad. The purity of the sample prepared 240
o
C is demonstrated by the sharp A1
peak of CZTS at 333 cm
-1
. No other peaks of secondary phases could be found in the spectra.
P.T. Hong et al. / VNU Journal of Science: Mathematics – Physics, Vol. 34, No. 3 (2018) 55-60
58
Fig. 3. EDS spectrum of CZTS nanopowder (a) and SEM image of CZTS nanoparticles
(b) prepared at 240
o
C in 24h.
Energy dispersive spectroscopy, shown in Fig. 3a, was applied to verify the purity as well as the
stoichiometry of the CZTS nanoproduct prepared at 240
o
C. The quantitative measurement shows that
percentage of Cu:Zn:Sn:S element was closed to stoichiometry ratio 2:1:1:4. No clear trace of carbon
was detected in the sample. It is important to get a pure CZTS product without carbon residue because
carbon is reported to increase the series resistance of solar cell and results in detachment of CZTS
absorber layer from substrates [11- 13]. The results show that the as-prepared CZTS powder met the
criteria for making absorber layer for solar cell.
SEM image of the sample prepared at 240
o
C in 24h (Fig. 3b) shows that particle size is relatively
uniform, which aggregates together to form large cluster with average size of about 500 nm. The
uniformity of the nanoparticles demonstrates the potential for making ink to fabricate absorber layer
thin films.
0.5 1.0 1.5 2.0 2.5 3.0 3.5
0
200
400
(
h
)2
Energy (eV)
Fig 4. Absorption spectrometry of CZTS at 240 in 24h.
(b)
(a)
P.T. Hong et al. / VNU Journal of Science: Mathematics – Physics, Vol. 34, No. 3 (2018) 55-60 59
Fig. 4 shows the plot of (h)2 vs. h of CZTS nanoparticles prepared at 240 oC. The band gap of
the nanoproduct was estimated by extrapolating the linear part of the plot to the horizontal axis. The
result shows that the band gap of CZTS is 1.52 eV, which is consistent with bandgap reported for
CZTS prepared by solution methods. This value is also closed to the optimum required bandgap for
solar absorber [14- 16].
4. Conclusion
In this study, we have investigated the effect of temperature on CZTS nanoparticles prepared by
hydrothermal method. It was found that temperature of 240
o
C is required for the formation of single
phase CZTS nanoparticles of uniform size and shape. The optical bandgap of 1.52 eV was estimated
from diffusion reflective measurement. Together with the low cost of precursors, the processing
route reported in this paper is very potential for fabricating CZTS ink towards commercial solar
cell product.
Acknowledgements
This research is funded by Vietnam National Foundation for Science and Technology
Development (NAFOSTED) under grant number 103.02-2017.351.
References
[1] C. Malerba, F. Biccari, C.L.A. Ricardo, M. Valentini, R. Chierchia, M. Müller, A. Santoni, E. Esposito, P.
Mangiapane, P. Scardi, A. Mittiga, CZTS stoichiometry effects on the band gap energy, J.Alloy.Compd582
(2014), 528-534.
[2] N. Ali, R. Ahmed, B.-U.-Haq, and A. Shaari, Advances in CZTS thin films and nanostructured, Opto-Electronics
Review (2015), 137-142.
[3] S. Zhuka, A. Kushwahaa, T.K.S. Wongb, S.M.-Panaha, A. Smirnovd, G.K. Dalapatia, Critical review on sputter-
deposited Cu2ZnSnS4 (CZTS) based thin film photovoltaic technology focusing on device architecture and
absorber quality on the solar cells performance, Sol. Energy Mater. Sol. Cells 171 (2017), 239-252.
[4] J. Zhong, Z. Xia, M. Luo, J. Zhao, J. Chen, L. Wang, X. Liu, D.-J. Xue, Y.-B. Cheng, H. Song, and J. Tang,
Sulfurization induced surface constitution and its correlation to the performance of solution-processed
Cu2ZnSn(S,Se)4 solar cells, Sci Rep (2014), 6288(1)-6288(9).
[5] C.-L. Wang, C.-C. Wang, B. Reeja-Jayan and A. Manthiram, Low-cost, Mo(S,Se)2-free superstrate-type solar
cells fabricated with tunable band gap Cu2ZnSn(S1-xSex)4nanocrystal-based inks and the effect of sulfurization,
RSC Advances (2013), 19946-19951.
[6] M.P.Suryawanshi, U.V.Ghorpade, U.P.Suryawanshi, M. He, J. Kim, M.G. Gang, P.S.Patil, A.V.Moholkar, J.H.
Yun, and J.H. Kim, Aqueous-Solution-ProcessedCu2ZnSn(S,Se)4Thin-Film Solar Cells via an Improved
Successive Ion-Layer-Adsorption-Reaction Sequence, ACS Omega 2 (2017), 9211-9220.
[7] I.D. Olekseyuk, I.V. Dudchak, L.V.Piskach, Phase equilibria in the Cu2S-ZnS-SnS2 system, J.Alloy.Compd 368
(2003),135-143.
[8] S. Das, R.M. Krishna, S. Ma, K.C. Mandal, Single phase polycrystalline Cu2ZnSnS4 grown by vertical gradient
freeze technique, J.Cryst. Growth 381 (2013), 148-152.
[9] S. Siebentritt, S. Schorr, Kesterites-a challenging material for solar cells, Prog.Photovoltaics Res. Appl.20 (2012),
512-519.
[10] P.A. Fernandes, P.M.P. Salomé, A.F. da Cunha, Study of polycrystalline Cu2ZnSnSe4 films by Raman scattering,
J.Alloy.Compd 509 (2011), 7600-7606.
P.T. Hong et al. / VNU Journal of Science: Mathematics – Physics, Vol. 34, No. 3 (2018) 55-60
60
[11] G.M. Ilari, C.M. Fella, C.Ziegler, A.R. Uhl, Y.E. Romanyukand, A.N. Tiwari, Cu2ZnSnSe4 solar cell absorbers
spin-coated from amine-containing ether solutions, Sol. Energy Mater. Sol. Cells 104 (2012), 125-130.
[12] E.J. Lee, S.J. Park, J.W. Cho, J.H. Gwak, M.K. Oh and B.K. Min, Nearly carbon-free printable CIGS thin films
for solar cell applications, Sol. Energy Mater. Sol. Cells 95 (2011), 2928-2932.
[13] S.J. Ahn, C.W. Kim, J.H. Yun, J.H. Gwak, S.H. Jeong,B.H. Ryu and K.H. Yoon, CuInSe2 (CIS) Thin film solar
cells by direct coating and selenization of solution precursors, J. Phys. Chem. C 114 (2010) 8108–8113.
[14] W.C. Liu, B.L. Guo, X.S. Wu, F.M. Zhang, C.L. Mak and K.H. Wong, Facile hydrothermal synthesis of
hydrotropic Cu2ZnSnS4nanocrystal quantum dots: band gap engineering and phonon confinement effect, J. Mater.
Chem A1 (2013), 3182-3186.
[15] K. Woo, Y. Kim and J. Moon, A non-toxic, solution-prcessed, earth abundant absorbing layer for thin-film solar
cells, Energy Environ. Sci. 5 (2012), 5340-5345.
[16] S. Chen, J.-H.Yang, X.G. Gong, A. Walsh, amd S.-H.Wei, Intrinsic point defect and complexes in the quaternary
kesterite semiconductor Cu2ZnSnS4, Phys. Rev. B 82 (2010), 245204-245204.
Các file đính kèm theo tài liệu này:
- 4280_97_8419_2_10_20181029_524_2114355.pdf