Possible dissociation processes of the SinV2+ clusters (n = 1 - 8)
From the electronic energies of the most stable isomers of the clusters, taking into
account the zero point energy corrections, we compute the dissociation energies of the
studied clusters into small clusters by the possible separation channels.
The dissociation energy of a cluster is the difference between sum of the electronic
energies of the forming species and the electronic energy of the parent cluster.
The SinV2+ clusters would have seven dissociation channels that are the most possible:
SinV2+ Sin-1V2+ + Si (1) SinV2+ SinV+ + V (5)
SinV2+ Sin-1V+ + SiV (2) SinV2+ Sin + V2+ (6)
SinV2+ SinV + SiV+ (3) SinV2+ Sin+ + V2 (7)
SinV2+ SinV+ V+ (4)
The dissociation energy corresponding to each of the above processes is shown in the
Table and Figure 4.
Calculation results which are presented in Tables and Figure 4 show that: The first
direction, namely the dissociating of SinV2+ cluster into a Si atom, is the most difficult one
due to its highest separation energy. The (4) and (5) pathways that produce one V/V+
atom/ion are the most likely ones though they are in competition with the channels that
fragment the V2 or V2+ dimers, namely the (6) and (7) channels.
In most of the fragmentation channels, we would see that the Si5V2+ cluster has the
highest dissociation energies. In other words, this is the most stable cluster among the
investigated clusters SinV2+ (n = 1 - 8). This cluster possesses a pentagonal bipyramidal
geometry with the two V atoms sitting on the base plane and being separated by a Si atom.
This isomer of Si5V2+ associates with the spin multiplicity of two or it has only one
unpaired electron. It is also seen that the Si3V2+ cluster has high dissociation energies as
compared to the other clusters. Therefore this cluster which is in a triangular bipyramid is
also a stable cluster among the cluster studied.
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66
HNUE JOURNAL OF SCIENCE DOI: 10.18173/2354-1059.2017-0056
Chemical and Biological Science 2017, Vol. 62, Issue 10, pp. 66-73
This paper is available online at
SinV2
+
(N = 1 - 8) CLUSTERS: A DFT INVESTIGATION
ON THEIR DISSOCIATION BEHAVIORS
Nguyen Thi Minh Hue
1,2
, Nguyen Cao Khang
3
, Pham Thuy Duong
1
,
Le Huy Nguyen
1
and Ngo Tuan Cuong
1,2
1
Faculty of Chemistry, Hanoi National University of Education
2
Center for Computational Science, Hanoi National University of Education
3
Faculty of Physics, Hanoi National University of Education
Abstract. The method of density functional theory using B3P86/6-311+G(d)
functional/basis set have been performed for searching stable structures and
preferable dissociation channels of the doubly vanadium-doped silicon cationic
clusters SinV2
+
(n = 1 - 8). The dissociation energies of the cation clusters SinV2
+
into
smaller atoms, cations and clusters have been determined for the first time. This
results show that the SinV2
+
clusters have a priority for the decomposition of one
vanadium atom/cation along with smaller clusters, and that the Si5V2
+
is the most
stable species among the investigated clusters.
Keywords: Vanadium-doped silicon clusters, density functional theory, dissociation.
1. Introduction
Over the past decades, silicon clusters have been preserved to be the mainstay objects
of study owing to their potential application, and much research effort has been directed
towards the field. [1-6] While pure silicon clusters have been known in the form of non-
magnetic states, their incorporating with transition metals shall make them stable in high
spin states due to the unpaired electrons they possess [7-10]. Vanadium is a transition
metal that possess three unpaired electrons in its 3d sub-shell. The doping of a vanadium
atom into silicon clusters of small sizes SinV
+
have been investigated recently, by both
experimental and theoretical work, for their geometrical structures [9, 11, 12]. That is,
clusters of interest could be generated by an introduction of laser ablation to the cluster
sources. Then the technique of Infrared Multiple Photon Dissociation (IR-MPD) could be
applied to obtain vibrational spectra for the clusters in gas phase, and their structural
assignment in detail would be done by a combination with quantum chemical calculations.
The method of density-functional theory (DFT) can be used to optimize the geometry,
Received October 27, 2017. Revised December 15, 2017. Accepted December 22, 2017.
Contact Ngo Tuan Cuong, e-mail address: cuongnt@hnue.edu.vn
SinV2
+
(n = 1 - 8) clusters: a dft investigation on their dissociation behaviors
67
compute the electronic energies of different isomers of clusters from this the most stable
isomer of each cluster size could be predicted. Then vibrational spectra obtained by
theoretical calculations could help to deduce structures of specific cluster-size [13-14]. In
another work, vanadium-doped small silicon anionic clusters, SinV
(-)
and SinV2
(-)
(n = 3 - 6),
have also been investigated by anion photoelectron spectroscopy in combination with
theoretical calculation. The vertical detachment energies (VDEs) and adiabatic
detachment energies (ADEs) of these clusters as well as their geometries have been
determined [15]. In our recent theoretical work, the doubly V-doped silicon clusters in
their cationic form SinV2
+
upto six Si atoms (n = 1 - 6) have been investigated for their
stable geometries [16]. However, their stabilities associating with their dissociation
behaviors have not been studied yet. What happens to the doubly vanadium-doped
cationic silicon clusters upon receiving certain amount of energies, that is, would the
clusters dissociate a V atom/cation or would they fragment a dimer? Being motivated by
this enquiry, this research is done for answering it.
2. Content
2.1. Computational methods
In order to investigate the dissociation behavior of doubly vanadium-doped
cationic silicon clusters SinV2
+
(n = 1 - 8), the searching for the most stable isomers of
Sin
0/+
, SinV
0/+
and SinV2
+
(n = 1 - 8) is needed. And we have used the method of
density functional theory (DFT) which is implemented in the Gaussian 09 program
[17-21] for all of our calculations.
The stable geometrical structures of the cluster Sin, SinV
0/+
and SinV2
+
have been
determined as follows. Firstly, we have optimized all the possible geometries of the pure
silicon clusters Sin (n=1-8), following by frequency calculations to confirm the stable
structures. Secondly, one and two V atoms have been attached at different positions in the
lowest energy lying isomers of the Sin clusters forming new input geometrical structures
of the SinV
0/+
and SinV2
+
(n = 1 - 8) clusters. These structures then have been re-optimized,
also followed by frequency calculations for their stable isomers. The optimized
geometries of the investigated clusters are illustrated in Figures 1-3 in associating with
their point groups and electronic states.
The B3P86/6-311+G(d) combination of functional and basis set has been employed
[7, 16] since it is good for the calculation of silicon clusters doped with transition metals.
From the calculation results the electronic energies with zero point energy corrections,
relative energies between isomers for each cluster stoichiometry. After identifying the
most stable isomers of each cluster size of the Sin, Sin
+
, SinV
0/+
and SinV2
+
(n = 1 - 8),
the dissociation energies of the SinV2
+
(n = 1 - 8) cluster have been evaluated.
2.2. Results and discussion
2.2.1. Geometrical structures
* Geometrical structures of neutral SinV
0/+
clusters (n = 1 - 8)
By using the computational method that is described in Section 2, the most stable
isomer for each cluster stoichiometry is found, and represented in Table 1.
Nguyen Thi Minh Hue, Nguyen Cao Khang, Pham Thuy Duong, Le Huy Nguyen
and Ngo Tuan Cuong
68
Si1V1
0/+
: The hetero-diatomic Si1V1
0/+
clusters belong to the C∞v point group.
Si2V1
0/+
: The most stable isomers of this cluster size have an isosceles triangle which
is in C2v point group and associating with the electronic state
4
B1,
5
B1 for neutral and
cationic cluster, respectively.
Si3V1
0/+
: The most stable isomer of the Si3V
+
cluster has a tetrahedral shape with the
three Si atoms forming the base plane and the V atom locating on its top. This structure
associates with 5 and 6 unpair electrons, respectively for the neutral and cationic form.
Si4V1
0/+
: In the most stable isomer of the Si4V
0/+
cluster, the 4 Si atoms form a
rhombous and the V atom is out of the Si4 base plane, forming the distorted tetrahedral
pyramid. This structure belongs to the Cs point group associating with the
6Aꞌ and 5Aꞌ
electronic states, respectively for the neutral and cationic cluster.
Si5V1
0/+
: In the most stable isomer of the Si5V
0/+
cluster, four of the five Si atoms
form a rhombous while the remaining Si atom and the V atoms cape on different side of
the Si4 base plane forming the distorted octahedral. The molecule belongs to the
symmetry group Cs with the electron state
4
A" and
5
A", respectively.
Si6V1
0/+
: Six Si atoms and the one V atom arrange in a pentagonal bipyramidal
associating with the Cs point group and the
4Aꞌ, 5Aꞌ electronic states, respectively.
Si7V
0/+
: Seven Si atoms forming a 3D structure which is on the way forming the
tetragonal antiprism of the Si8 cluster, while the V atom capes onto one of its faces. This
structure associates with the
4
A, and
5
A electronic states, respectively.
Si8V
+
: Eight Si atoms forming a distorted cube or a tetragonal antiprism as it is in the
pure silicon Si8 cluster, while the V atom locates on one of its faces. This structure
belongs to the C1 point group and associates with the
4
A, and
5
A electronic state,
respectively.
Si1V1, C∞v
Si1V1
+
, C∞v
Si2.V1, C2v,
4
B1
Si2.V1
+
, C2v,
5
B1
Si3V1, C1,
6
A
Si3V1
+
, C1,
7
A
Si4.V1, Cs,
6A’
Si4.V1
+
, Cs,
5A’
Si5V1, Cs,
4A’’
Si5V1
+
, Cs,
5A’’
Si6V1, Cs,
4A’
Si6V1
+
, Cs,
5A’
Si7V1, C1,
4
A
Si7V1
+
, C1,
5
A
Si8V1, C1,
4
A
Si8V1
+
, C1,
5
A
Figure 1. Geometrical structures of SinV1
0/+
cluster (n = 1 - 8)
* Geometrical structures of SinV2
+
clusters (n = 7 - 8)
The geometrical structures of SinV2
+
clusters up to six Si atoms (n = 1 - 6) have been
reported in our previous work [16]. Hereafter we would like to report the stable isomers
of the two cluster compositions, namely Si7V2
+
and Si8V2
+
.
SinV2
+
(n = 1 - 8) clusters: a dft investigation on their dissociation behaviors
69
Cluster Si7V2
+
For Si7V2
+
cluster size, many isomers with different spin multiplicities have been
found whose geometries are illustrated in Figure 2. Many of them contain a pentagonal
bipyramid with two atoms cape outside of the bipyramid.
In the energetically low-lying isomers of the Si7V2
+
cluster one of the two V atoms
positions at one of the top vertices of the pentagonal bipyramid and the other V atom
locates on one of the faces oppositely to the first V atom. The pentagonal bipyramid of the
Si5V2
+
cluster [16] still preserve in this cluster size.
The most stable isomer of Si7V2
+
could be described as such: six of the seven Si atom
and one of the two V atom form the pentagonal bipyramid with the V at the top of it. The
remaining Si and V atoms cape onto different faces of the petagonal bipyramid. This
structure though preserves the pentagonal bipyramid as it does in the Si6V2
+
cluster but it
does not simply grow from the most stable isomer of the previous cluster size. It
associates with the spin multiplicity of 8 and the C1 point group.
A (C1,
8
A, 0.00 eV)
B (C1,
2
A, 0.01 eV)
C (C1,
8
A, 0.06 eV)
D (C1,
8
A, 0.23 eV)
E (C1,
6
A, 0.31 eV)
F (C1,
8
A, 0.39 eV)
G (C1,
10
A, 0.42 eV)
H (C1,
10
A, 0.55 eV)
I (C1,
8
A, 0.57 eV)
J (C1,
10
A, 0.65 eV)
K (Cs,
6A’, 0.84 eV)
L (C1,
8
A, 0.93 eV)
Figure 2. Geometrical structures, symmetry point groups, electronic states
and relative energies between isomers of the Si7V2
+
cluster
Cluster Si8V2
+
For Si8V2
+
cluster size, many isomers with different spin multiplicities have been
found, whose geometries are illustrated in Figure 3.
The most stable isomer of Si8V2
+
arise from the distorted cube or tetragonal anti-
prism structure of the Si8 pure cluster with the two V atoms caping on neighboring faces
of the cube. It also associate with the spin multiplicity of 8 and the C1 point group.
Nguyen Thi Minh Hue, Nguyen Cao Khang, Pham Thuy Duong, Le Huy Nguyen
and Ngo Tuan Cuong
70
A (C1,
8
A, 0.00 eV)
B (C1,
4
A, 0.26 eV)
C (C1,
6
A, 0.27 eV)
D (C1,
6
A, 0.37 eV)
E (C1,
2
A, 0.41 eV)
F (C1,
2
A, 0.77 eV)
G (C1,
4
A, 1.03 eV)
H (C1,
4
A, 1.15 eV)
Figure 3. Geometrical structures, symmetry point groups, electronic states
and relative energies between isomers of the Si8V2
+
cluster
2.2.2. Possible dissociation processes of the SinV2
+
clusters (n = 1 - 8)
From the electronic energies of the most stable isomers of the clusters, taking into
account the zero point energy corrections, we compute the dissociation energies of the
studied clusters into small clusters by the possible separation channels.
The dissociation energy of a cluster is the difference between sum of the electronic
energies of the forming species and the electronic energy of the parent cluster.
The SinV2
+
clusters would have seven dissociation channels that are the most possible:
SinV2
+
Sin-1V2
+
+ Si (1) SinV2
+
SinV
+
+ V (5)
SinV2
+
Sin-1V
+
+ SiV (2) SinV2
+ Sin + V2
+
(6)
SinV2
+
SinV + SiV
+
(3)
SinV2
+ Sin
+
+ V2 (7)
SinV2
+
SinV+ V
+
(4)
The dissociation energy corresponding to each of the above processes is shown in the
Table and Figure 4.
Calculation results which are presented in Tables and Figure 4 show that: The first
direction, namely the dissociating of SinV2
+
cluster into a Si atom, is the most difficult one
due to its highest separation energy. The (4) and (5) pathways that produce one V/V
+
atom/ion are the most likely ones though they are in competition with the channels that
fragment the V2 or V2
+
dimers, namely the (6) and (7) channels.
In most of the fragmentation channels, we would see that the Si5V2
+
cluster has the
highest dissociation energies. In other words, this is the most stable cluster among the
investigated clusters SinV2
+
(n = 1 - 8). This cluster possesses a pentagonal bipyramidal
geometry with the two V atoms sitting on the base plane and being separated by a Si atom.
This isomer of Si5V2
+
associates with the spin multiplicity of two or it has only one
unpaired electron. It is also seen that the Si3V2
+
cluster has high dissociation energies as
compared to the other clusters. Therefore this cluster which is in a triangular bipyramid is
also a stable cluster among the cluster studied.
SinV2
+
(n = 1 - 8) clusters: a dft investigation on their dissociation behaviors
71
Table 1. Energy of the dissociation channels of the SinV2
+
clusters
calculated at the B3P86/6-311+G(d) level of theory
Cluster
Composition/Dissociation
Channel
(1) (2) (3) (4) (5) (6) (7)
n = 8 12.77 5.05 5.83 3.23 3.56 4.68 5.48
n = 7 12.22 4.61 4.53 3.84 3.08 3.16 4.86
n = 6 11.99 5.06 4.92 3.10 3.20 3.38 5.35
n = 5 13.51 6.00 6.01 3.71 3.87 4.86 6.77
n = 4 12.55 5.92 5.67 3.29 3.30 3.80 5.61
n = 3 12.73 5.38 4.60 3.89 4.18 4.48 6.42
n = 2 12.84 5.22 5.22 2.66 3.46 5.14 6.70
0 1 2 3 4 5 6 7 8 9
0
2
4
6
8
10
12
14
Si
n
V
+
2
1
2
3
4
5
6
7
E
n
e
rg
y
,
e
V
Figure 4. Dissociation energy of the SinV2
+
clusters for the channels (1) (7)
3. Conclusion
The method of density functional theory using B3P86/6-311+G(d) functional/basis
set have been performed for searching stable structures and preferable dissociation
channels of the doubly vanadium-doped silicon cationic clusters SinV2
+
(n = 1 - 8). The
results of the work are as follows:
The geometries of stable isomers of the SinV
0/+
, SinV2
+
clusters are determined. The
clusters of small size (n = 1, 2) have flat structures, larger clusters (n = 3 - 8) possess
spatial structures. The most stable isomer for each cluster stoichiometry has high spin
multiplies, ranging from 4 to 8.
The energies of many dissociation channels of the cationic clusters SinV2
+
(n = 1 - 8)
into smaller atoms, cations and clusters have been determined. The results show that the
SinV2
+
clusters prefer to dissociate one vanadium atom/cation along with smaller clusters.
Nguyen Thi Minh Hue, Nguyen Cao Khang, Pham Thuy Duong, Le Huy Nguyen
and Ngo Tuan Cuong
72
Acknowledgement. This research is funded by the Ministry of Education and
Training of Vietnam under grant number B2015-17-68. The authors would like to
thank the Center for Computational Science, Hanoi National University of Education for
using its computational facility.
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